发明授权
- 专利标题： Semiconductor memory device operating with low current consumption
- 专利标题（中）： 具有低电流消耗的半导体存储器件
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申请号： US10409120申请日： 2003-04-09
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公开(公告)号： US06873561B2公开(公告)日： 2005-03-29
- 发明人: Tsukasa Ooishi
- 申请人： Tsukasa Ooishi
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Burns, Doane, Swecker & Mathis, L.L.P.
- 优先权： JP2002-234814 20020812
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C7/00
摘要：
In a resistance value variable memory, substrate voltages and/or substrate biases of a digit line drive circuit, a word line drive circuit and a bit line drive circuit for a memory cell array are changed in accordance with an operation mode. A driving power on signal lines connected to memory cells can be increased, and a leakage current during standby can be reduced without increasing a circuit layout area.
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