发明授权
- 专利标题： Semiconductor device with cobalt silicide contacts and method of making the same
- 专利标题（中）： 具有硅化钴触点的半导体器件及其制造方法
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申请号： US10641232申请日： 2003-08-13
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公开(公告)号： US06878627B1公开(公告)日： 2005-04-12
- 发明人: Water Lur , David Lee , Kuang-Chih Wang
- 申请人： Water Lur , David Lee , Kuang-Chih Wang
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corporation
- 当前专利权人： United Microelectronics Corporation
- 当前专利权人地址： TW Hsinchu
- 代理商 J. Nicholas Gross
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/28 ; H01L21/285 ; H01L21/336 ; H01L21/3205 ; H01L21/302 ; H01L21/44
摘要：
A semiconductor device that includes cobalt-silicide based contacts is disclosed, as well as a process for making the same. Combinations of alloyed layers of Co—Ti— along with layers of Co— are arranged and heat treated so as to effectuate a silicide reaction on a silicon substrate. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor devices and processes.
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