发明授权
- 专利标题： Photosensitive polymeric memory elements
- 专利标题（中）： 光敏聚合物记忆元件
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申请号： US10951370申请日： 2004-09-28
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公开(公告)号： US06878961B2公开(公告)日： 2005-04-12
- 发明人: Christopher F. Lyons , Ramkumar Subramanian , Mark S. Chang
- 申请人： Christopher F. Lyons , Ramkumar Subramanian , Mark S. Chang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Amin & Turocy, LLP
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; G11C13/02 ; H01L27/28 ; H01L35/24
摘要：
A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.
公开/授权文献
- US20050045877A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS 公开/授权日：2005-03-03
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