发明授权
US06882007B2 SRAM memory cell, memory cell arrangement and method for fabricating a memory cell arrangement
有权
SRAM存储单元，存储单元布置和用于制造存储单元布置的方法
- 专利标题： SRAM memory cell, memory cell arrangement and method for fabricating a memory cell arrangement
- 专利标题（中）： SRAM存储单元，存储单元布置和用于制造存储单元布置的方法
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申请号： US10387256申请日： 2003-03-11
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公开(公告)号： US06882007B2公开(公告)日： 2005-04-19
- 发明人: Erhard Landgraf , Richard Johannes Luyken , Christian Pacha , Thomas Schulz
- 申请人： Erhard Landgraf , Richard Johannes Luyken , Christian Pacha , Thomas Schulz
- 申请人地址： DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE
- 代理机构： Altera Law Group, LLC
- 代理商 Jeffrey R. Stone
- 优先权： DE10211335 20020314
- 主分类号： H01L21/8244
- IPC分类号： H01L21/8244 ; H01L27/11 ; H01L29/76
摘要：
The invention relates to an SRAM memory cell, a memory cell arrangement and a method for fabricating a memory cell arrangement. The SRAM memory cell has six vertical transistors, of which four are connected up as flip-flip transistors and two are connected up as switching transistors, four of the vertical transistors being arranged at corners of the rectangular base area.
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