发明授权
US06882580B2 Memory devices having power supply routing for delay locked loops that counteracts power noise effects
有权
具有用于抵消功率噪声影响的延迟锁定环路的电源路由的存储器件
- 专利标题: Memory devices having power supply routing for delay locked loops that counteracts power noise effects
- 专利标题(中): 具有用于抵消功率噪声影响的延迟锁定环路的电源路由的存储器件
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申请号: US10358739申请日: 2003-02-05
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公开(公告)号: US06882580B2公开(公告)日: 2005-04-19
- 发明人: Hyun-wook Lim , Dae-hyun Chung
- 申请人: Hyun-wook Lim , Dae-hyun Chung
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec PA
- 优先权: KR2002-8474 20020218
- 主分类号: G11C7/22
- IPC分类号: G11C7/22 ; G11C8/00 ; G11C11/401 ; G11C11/407 ; G11C11/4074 ; G11C11/4076 ; H03K5/13 ; H03L7/00 ; G11C7/00
摘要:
A memory device includes first and second power supply pads configured to be connected to a power supply. The memory device further includes a data output circuit that receives power via the first power supply pad and outputs data responsive to an internal clock signal, and a delay-locked loop (DLL) circuit that receives power via the second power supply pad independently of the first power supply pad and that generates the internal clock signal responsive to an external clock signal.
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