Invention Grant
- Patent Title: Patterning semiconductor layers using phase shifting and assist features
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Application No.: US10102024Application Date: 2002-03-19
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Publication No.: US06883159B2Publication Date: 2005-04-19
- Inventor: Richard Schenker , Gary Allen
- Applicant: Richard Schenker , Gary Allen
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F1/26 ; G03F1/32 ; G03F7/00 ; G03F7/20 ; G06F17/50 ; H01L23/58 ; H01L29/06
Abstract:
A photomask and method of patterning a photosensitive layer using a photomask, the photomask including a substrate and a film coupled to substrate. The film is etched with a phase shifted assist feature, a low aspect ratio assist feature or phase shifted low aspect primary features.
Public/Granted literature
- US20030178703A1 Patterning semiconductor layers using phase shifting and assist features Public/Granted day:2003-09-25
Information query
