发明授权
- 专利标题： Method for producing bonding wafer
- 专利标题（中）： 接合晶片的制造方法
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申请号： US10380979申请日： 2002-07-09
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公开(公告)号： US06884696B2公开(公告)日： 2005-04-26
- 发明人: Hiroji Aga , Shinichi Tomizawa , Kiyoshi Mitani
- 申请人： Hiroji Aga , Shinichi Tomizawa , Kiyoshi Mitani
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Hogan & Hartson, LLP
- 优先权： JP2001-216828 20010717
- 国际申请： PCTJP02/06965 WO 20020709
- 国际公布： WO0300938 WO 20030130
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46 ; H01L21/762 ; H01L21/8238 ; H01L27/12
摘要：
A method for producing a bonded wafer by the ion implantation delamination method includes at least a step of bonding a bond wafer having a micro bubble layer formed by gaseous ion implantation and a base wafer serving as a support substrate and a step of delaminating the bond wafer at the micro bubble layer as a border to form a thin film on the base wafer. After the delamination of the bond wafer, the bonded wafer is subjected to a heat treatment in an atmosphere of an inert gas, hydrogen or a mixed gas thereof, then the bonded wafer is subjected to thermal oxidation to form a thermal oxide film on the surface of the thin film, and then the thermal oxide film is removed to reduce thickness of the thin film.
公开/授权文献
- US20030181001A1 Method for producing bonding wafer 公开/授权日：2003-09-25
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