发明授权
- 专利标题： Process and unit for production of polycrystalline silicon film
- 专利标题（中）： 生产多晶硅膜的工艺和单元
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申请号： US10148562申请日： 2000-10-06
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公开(公告)号： US06884699B1公开(公告)日： 2005-04-26
- 发明人: Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
- 申请人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha,Seiko Epson Corporation
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha,Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 国际申请： PCTJP00/07010 WO 20001006
- 国际公布： WO0231871 WO 20020418
- 主分类号： C23C14/58
- IPC分类号： C23C14/58 ; H01L21/20 ; H01L21/336 ; H01L21/00 ; H01L21/331 ; H01L21/26
摘要：
A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
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