公开(公告)号：US06884699B1

公开(公告)日：2005-04-26

申请号：US10148562

申请日：2000-10-06

申请人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Junichi Nishimae ,  Tatsuki Okamoto ,  Yukio Sato ,  Mitsuo Inoue ,  Mitsutoshi Miyasaka ,  Hiroaki Jiroku

发明人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Junichi Nishimae ,  Tatsuki Okamoto ,  Yukio Sato ,  Mitsuo Inoue ,  Mitsutoshi Miyasaka ,  Hiroaki Jiroku

IPC分类号： C23C14/58 ,  H01L21/20 ,  H01L21/336 ,  H01L21/00 ,  H01L21/331 ,  H01L21/26

CPC分类号： C23C14/5813 ,  B23K26/0604 ,  B23K26/0738 ,  B23K26/0838 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/52 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L29/66757 ,  Y10S438/969

摘要： A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.

摘要翻译： 一种制造多晶硅膜的方法包括在玻璃基板上形成具有与第一区域接触的第一区域和第二区域的非晶硅膜，通过用非晶硅膜的第一区域照射非晶硅膜形成第一多晶部分， 具有不小于390nm且不大于640nm的波长的激光，并且通过照射第二区域和形成与第一多晶部分接触的第二多晶部分的区域的部分形成第二多晶部分， 具有激光的非晶硅膜。

公开(公告)号：US06437284B1

公开(公告)日：2002-08-20

申请号：US09599645

申请日：2000-06-23

申请人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Keisuke Furuta ,  Hidetada Tokioka ,  Tomohiro Sasagawa ,  Junichi Nishimae ,  Mitsuo Inoue ,  Yukio Sato

发明人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Keisuke Furuta ,  Hidetada Tokioka ,  Tomohiro Sasagawa ,  Junichi Nishimae ,  Mitsuo Inoue ,  Yukio Sato

IPC分类号： B23K2606

CPC分类号： B23K26/0732 ,  B23K2101/40 ,  H01L21/02675 ,  H01L21/2026

摘要： An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming, apparatus makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam 2 such as directivity in the direction of shorter side, making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed.

摘要翻译： 提供了通过激光热处理工艺控制用于形成高性能薄膜的激光束光斑轮廓的光学系统。 在形成在基板上的膜上照射矩形激光束的光学系统中，强度分布形成装置使得强度分布沿长度方向均匀，同时保持激光束2的特性，例如沿短边方向的方向性 ，使得可以将光集中到由激光束的性质允许的极限，并且在设置在基板上的膜上实现最大强度梯度。 因此，可以在设置在基板上的膜上产生陡峭的温度分布，结果，可以形成高性能的薄膜。

公开(公告)号：US06566683B1

公开(公告)日：2003-05-20

申请号：US09708608

申请日：2000-11-09

申请人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

发明人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

IPC分类号： H01L2904

CPC分类号： H01L27/1285 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1296

摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.

摘要翻译： 通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束 在形成在基板上的薄膜材料上。

公开(公告)号：US06753548B2

公开(公告)日：2004-06-22

申请号：US10420779

申请日：2003-04-23

申请人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

发明人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

IPC分类号： H01L2904

CPC分类号： H01L27/1285 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1296

摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.

摘要翻译： 通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束 在形成在基板上的薄膜材料上。

公开(公告)号：US06602765B2

公开(公告)日：2003-08-05

申请号：US09875910

申请日：2001-06-08

申请人： Hiroaki Jiroku ,  Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

发明人： Hiroaki Jiroku ,  Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.

公开(公告)号：US06573161B1

公开(公告)日：2003-06-03

申请号：US09674645

申请日：2000-11-02

申请人： Mitsutoshi Miyasaka ,  Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Satoh ,  Mitsuo Inoue ,  Tomohiro Sasagawa

发明人： Mitsutoshi Miyasaka ,  Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Satoh ,  Mitsuo Inoue ,  Tomohiro Sasagawa

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A fabrication process is provided for semiconductor devices having a crystalline semiconductor film formed on a substrate, the semiconductor film being an active layer of a transistor and being mainly composed of silicon, and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film. The semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.

摘要翻译： 本发明提供一种半导体器件的制造方法，该半导体器件具有在基板上形成的结晶半导体膜，该半导体膜是主要由硅组成的晶体管的有源层，并且至少包括形成氧化硅的底层保护层制造步骤 膜作为衬底上的底层保护层; 在衬底保护层上形成主要由硅构成的半导体膜的第一处理步骤; 以及在半导体膜上照射脉冲激光的第二处理步骤。 半导体膜被脉冲激光照射，脉冲激光的波长在370和710nm之间。 结果，使用低温工艺，可以简单可靠地制造高性能薄膜半导体器件。

公开(公告)号：US07097709B2

公开(公告)日：2006-08-29

申请号：US10305339

申请日：2002-11-27

申请人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Yukio Sato ,  Junichi Nishimae

发明人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Yukio Sato ,  Junichi Nishimae

IPC分类号： C30B1/08

CPC分类号： C30B13/24 ,  C30B1/00 ,  C30B29/06 ,  Y10S117/904 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/102

摘要： A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.

摘要翻译： 一种用于使用包括激光振荡器的线性辐射激光束和用于形成从激光振荡器辐射的激光束的激光光学系统使半导体膜结晶化的激光退火装置，用于半导体膜。 辐射到半导体膜上的每个激光光学系统的每个线性辐射激光束在半导体膜上以间隔几乎在长度方向上线性排列。

公开(公告)号：US06717105B1

公开(公告)日：2004-04-06

申请号：US10305168

申请日：2002-11-27

申请人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Yukio Sato ,  Junichi Nishimae

发明人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Yukio Sato ,  Junichi Nishimae

IPC分类号： B23K2600

CPC分类号： B23K26/0738 ,  B23K2101/40

摘要： A laser optical system includes a linear beam forming member for forming laser beams radiated from laser oscillators into a linear beam shape on a silicon film on a substrate. The laser optical system is arranged so that the optical axes of laser beams from the laser oscillators to the linear beam forming member are in substantially the same plane and substantially perpendicular to the substrate. Each laser beam is reflected from a reflecting mirror and applied to the silicon film on the substrate. Since the laser beams are applied to the substrate at the same time, the area irradiated can be increased, while each radiating laser beam maintains a required radiation intensity, resulting in high productivity.

摘要翻译： 激光光学系统包括线性波束形成构件，用于将从激光振荡器辐射的激光束形成为在基板上的硅膜上的线形束。 激光光学系统被布置成使得来自激光振荡器的激光束到线性光束形成部件的光轴基本上在相同的平面上并且基本上垂直于衬底。 每个激光束从反射镜反射并施加到衬底上的硅膜上。 由于激光束同时被施加到基板上，所以可以增加照射的面积，同时每个辐射激光束保持所需的辐射强度，导致高的生产率。

公开(公告)号：US06521492B2

公开(公告)日：2003-02-18

申请号：US09876132

申请日：2001-06-08

申请人： Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

发明人： Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： In the thin-film semiconductor device fabrication method according to the present invention, after forming an amorphous semiconductor film, the film is crystallized in the solid phase state, then a portion of the semiconductor film is molten by irradiating it with a pulsed laser beam having an absorption coefficient in amorphous silicon that is greater than the absorption coefficient in polysilicon. Thereby, polycrystalline thin-film semiconductor devices having superior characteristics can be fabricated.

公开(公告)号：US09941528B2

公开(公告)日：2018-04-10

申请号：US14342821

申请日：2012-08-23

申请人： Tetsuya Ogawa

发明人： Tetsuya Ogawa

IPC分类号： H01M8/04291 ,  H01M8/04119 ,  H01M8/0432 ,  H01M8/04537 ,  H01M8/04746 ,  H01M8/124

CPC分类号： H01M8/04291 ,  H01M8/04164 ,  H01M8/04373 ,  H01M8/04619 ,  H01M8/04761 ,  H01M2008/1293 ,  H01M2250/405 ,  Y02B90/16

摘要： A fuel cell system includes a fuel cell module for generating electrical energy by electrochemical reactions of a fuel gas and an oxygen-containing gas, and a condenser for condensing water vapor in an exhaust gas discharged from the fuel cell module by heat exchange between the exhaust gas and a coolant to collect the condensed water and supplying the collected condensed water to the fuel cell module. The condenser includes an air cooling condenser using the oxygen-containing gas as the coolant and a water cooling condenser using hot water stored in a hot water tank as the coolant. A thermoelectric conversion mechanism for performing thermoelectric conversion by a temperature difference between the exhaust gas and the oxygen-containing gas is provided between the air cooling condenser and the water cooling condenser.