发明授权
US06884704B2 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
有权
使用封装层的GaN器件中的欧姆金属接触和沟道保护
- 专利标题： Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
- 专利标题（中）： 使用封装层的GaN器件中的欧姆金属接触和沟道保护
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申请号： US10634348申请日： 2003-08-04
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公开(公告)号： US06884704B2公开(公告)日： 2005-04-26
- 发明人: Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
- 申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理机构： Ladas & Parry LLP
- 主分类号： H01L21/24
- IPC分类号： H01L21/24 ; H01L21/285 ; H01L21/335 ; H01L21/337 ; H01L29/20 ; H01L29/45 ; H01L21/48 ; H01L21/38
摘要：
A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
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