发明授权
- 专利标题: Semiconductor integrated circuit device with internal power supply potential generation circuit
- 专利标题(中): 具有内部电源电位生成电路的半导体集成电路器件
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申请号: US10095080申请日: 2002-03-12
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公开(公告)号: US06885235B2公开(公告)日: 2005-04-26
- 发明人: Shigeki Tomishima , Mitsutaka Niiro , Masanao Maruta , Hiroshi Kato , Masatoshi Ishikawa , Takaharu Tsuji , Hideto Hidaka , Hiroaki Tanizaki , Tsukasa Ooishi
- 申请人: Shigeki Tomishima , Mitsutaka Niiro , Masanao Maruta , Hiroshi Kato , Masatoshi Ishikawa , Takaharu Tsuji , Hideto Hidaka , Hiroaki Tanizaki , Tsukasa Ooishi
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Renesas Technology Corp.,Mitsubishi Electric Engineering Company Limited
- 当前专利权人: Renesas Technology Corp.,Mitsubishi Electric Engineering Company Limited
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2001-206291 20010706
- 主分类号: G11C11/407
- IPC分类号: G11C11/407 ; G11C5/14 ; G11C11/401 ; G11C29/06 ; G05F3/04
摘要:
An internal power supply potential generation circuit includes an overcharge prevention circuit connected to an internal power supply node. The overcharge prevention circuit includes a circuit outputting a signal to be determined that is determined by an internal power supply potential, a differential amplification circuit amplifying a difference in potential between the signal to be determined and a reference potential for output to a node as a signal indicating that current should be drawn, and a current draw circuit drawing current from the internal power supply node in response to the signal indicating that current should be drawn. Thus the semiconductor integrated circuit device of interest can provide a steady internal power supply potential.
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