发明授权
- 专利标题： Multi-layered unit including electrode and dielectric layer
- 专利标题（中）： 多层单元包括电极和电介质层
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申请号： US10375897申请日： 2003-02-26
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公开(公告)号： US06885540B2公开(公告)日： 2005-04-26
- 发明人: Yukio Sakashita
- 申请人： Yukio Sakashita
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Seed IP Law Group PLLC
- 主分类号： C01G29/00
- IPC分类号： C01G29/00 ; H01G4/005 ; H01G4/008 ; H01G4/12 ; H01G4/228 ; H01G4/30 ; H01G4/33 ; H01L21/02 ; H01L23/522 ; H01L27/01 ; H01L27/04 ; H01L27/06
摘要：
A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, an electrode layer, which is formed of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi2Sr2CaCu2O8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and is oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 on the electrode layer and oriented in the c axis direction on the electrode layer.
公开/授权文献
- US20040165334A1 Multi-layered unit 公开/授权日：2004-08-26
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