Invention Grant
US06885804B2 Semiconductor optical devices with differential grating structure and method for manufacturing the same 有权
具有差分光栅结构的半导体光学器件及其制造方法

Semiconductor optical devices with differential grating structure and method for manufacturing the same
Abstract:
A semiconductor optical device with a differential grating formed by a holography method and a method for manufacturing the same are provided. The provided semiconductor optical device includes an n-type InP substrate, a stack structure on the InP substrate having a waveguide and active layers, a first grating formed under the stack structure and on the InP substrate, and a second grating formed on the stack structure. The provided method for manufacturing the semiconductor optical device forms a first grating on the n-type InP substrate and under the active layer, and forms a second grating on the active layer. The first and second gratings are formed by the holography method.
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