发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US09966440申请日: 2001-09-27
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公开(公告)号: US06888254B2公开(公告)日: 2005-05-03
- 发明人: Akira Yamaguchi , Muneaki Maeno
- 申请人: Akira Yamaguchi , Muneaki Maeno
- 申请人地址: JP
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP
- 代理机构: Gray Cary Ware & Freidenrich LLP
- 优先权: JP2000-297670 20000928
- 主分类号: H01L21/82
- IPC分类号: H01L21/82 ; H01L23/522 ; H01L23/528 ; H01L27/02 ; H01L27/10 ; H01L23/04 ; H01L23/053 ; H01L23/12 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/73
摘要:
First and second IP cores are formed on one chip. Each of the first and second IP cores has metal layers. In the first IP core, an uppermost layer of the metal layers is thick and is a layer on which a core power source line is formed. In the second IP core, a metal layers equal in level to the uppermost layer in the first IP core becomes an intermediate layer. In the second IP core, thin intermediate layers are formed on this intermediate layer. Thin intermediate layers are layers on which signal lines are formed and have a narrow wiring pitch. In the second IP core, a layer on which a power source line is formed is provided on the thin intermediate layers.
公开/授权文献
- US20020036354A1 Semiconductor device 公开/授权日:2002-03-28
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