Invention Grant
US06890403B2 Apparatus and process for controlling the temperature of a substrate in a plasma reactor
失效
用于控制等离子体反应器中的衬底的温度的装置和方法
- Patent Title: Apparatus and process for controlling the temperature of a substrate in a plasma reactor
- Patent Title (中): 用于控制等离子体反应器中的衬底的温度的装置和方法
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Application No.: US10189080Application Date: 2002-07-02
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Publication No.: US06890403B2Publication Date: 2005-05-10
- Inventor: Jeff S. Cheung , Alexandros T. Demos
- Applicant: Jeff S. Cheung , Alexandros T. Demos
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials Inc.
- Current Assignee: Applied Materials Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: C23C16/52
- IPC: C23C16/52 ; H01J37/32 ; H01L21/316 ; C23F1/00
Abstract:
A process for controlling the temperature of a substrate in a plasma processing reactor chamber comprising flowing a cooling gas to a substrate at a flow pressure; and determining a temperature of the substrate. The difference between the temperature of the substrate and a desired temperature of the substrate is determined; and a pressure by which the flow pressure of the cooling gas is to be adjusted is determined. The flow pressure of the cooling gas to the substrate is adjusted in accordance with the determined pressure.
Public/Granted literature
- US20030039951A1 Apparatus and process for controlling the temperature of a substrate in a plasma reactor Public/Granted day:2003-02-27
Information query
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