发明授权
US06891158B2 Nondestructive characterization of thin films based on acquired spectrum 有权
基于获得光谱的薄膜的非破坏性表征

Nondestructive characterization of thin films based on acquired spectrum
摘要:
The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.
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