发明授权
- 专利标题： Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same
- 专利标题（中）： 具有用于冲击氧的注射物质的半导体装置及其制造方法
-
申请号： US10354094申请日： 2003-01-30
-
公开(公告)号： US06891232B2公开(公告)日： 2005-05-10
- 发明人: Kiyotaka Miyano , Kazuya Ohuchi , Ichiro Mizushima
- 申请人： Kiyotaka Miyano , Kazuya Ohuchi , Ichiro Mizushima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-023548 20020131
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/20 ; H01L21/336 ; H01L29/94 ; H01L29/76
摘要：
A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.
公开/授权文献
信息查询
IPC分类:
