发明授权
- 专利标题: Fully hidden refresh dynamic random access memory
- 专利标题(中): 完全隐藏刷新动态随机存取存储器
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申请号: US10920421申请日: 2004-08-18
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公开(公告)号: US06891770B2公开(公告)日: 2005-05-10
- 发明人: Takafumi Takatsuka , Hirotoshi Sato , Masaki Tsukude
- 申请人: Takafumi Takatsuka , Hirotoshi Sato , Masaki Tsukude
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2002-114504 20020417
- 主分类号: G11C11/403
- IPC分类号: G11C11/403 ; G11C8/18 ; G11C11/406 ; G11C11/408 ; G11C7/00
摘要:
Activation/inactivation of an internal normal row activation signal for controlling a memory cell selecting operation is controlled in response to leading and trailing edges of an address transition detection signal. When an internal normal row activating signal is activated, generation of an address transition detection signal is masked by mask circuitry. Conflict between an activating operation and an inactivating operation of the normal row activating signal can be prevented and an internal operation can be performed stably. A refresh-control-free dynamic semiconductor memory device having an interface compatible with a static random access memory and capable of stably performing an internal operation is provided.
公开/授权文献
- US20050018529A1 Fully hidden refresh dynamic random access memory 公开/授权日:2005-01-27
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