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US06894943B2 Semiconductor memory device which reduces the consumption current at the time of operation 失效
半导体存储器件，其减少了操作时的消耗电流

Semiconductor memory device which reduces the consumption current at the time of operation
摘要：
A semiconductor memory device includes a memory bank which is divided into a plurality of memory blocks including a first memory block and a second memory block. A first sense amplifier control unit activates sense amplifiers connected with the first memory block, in response to a first activation signal. A second sense amplifier control unit activates sense amplifiers connected with the second memory block, in response to a second activation signal. A signal control unit outputs the first activation signal and the second activation signal to the first sense amplifier control unit and the second sense amplifier control unit, separately from each other, the signal control unit outputting the second activation signal to the second sense amplifier control unit by delaying the first activation signal by a predetermined time after the outputting of the first activation signal.
摘要（中）：

半导体存储器件包括存储体，其被分成包括第一存储块和第二存储块的多个存储块。 响应于第一激活信号，第一读出放大器控制单元启动与第一存储器块连接的读出放大器。 响应于第二激活信号，第二读出放大器控制单元激活与第二存储器块连接的读出放大器。 信号控制单元将第一激活信号和第二激活信号彼此分离地输出到第一读出放大器控制单元和第二读出放大器控制单元，信号控制单元将第二激活信号输出到第二读出放大器控制单元 通过在第一激活信号的输出之后的预定时间延迟第一激活信号。

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