发明授权
- 专利标题： Plasma processing method and plasma processing apparatus
- 专利标题（中）： 等离子体处理方法和等离子体处理装置
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申请号： US10378601申请日： 2003-03-05
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公开(公告)号： US06897403B2公开(公告)日： 2005-05-24
- 发明人: Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
- 申请人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/00 ; H01L21/683 ; H01L21/687 ; B23K9/00
摘要：
A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.
公开/授权文献
- US20040173581A1 Plasma processing method and plasma processing apparatus 公开/授权日：2004-09-09
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