发明授权
US06900498B2 Barrier structures for integration of high K oxides with Cu and Al electrodes
失效
用于将高K氧化物与Cu和Al电极结合的阻挡结构
- 专利标题: Barrier structures for integration of high K oxides with Cu and Al electrodes
- 专利标题(中): 用于将高K氧化物与Cu和Al电极结合的阻挡结构
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申请号: US09681609申请日: 2001-05-08
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公开(公告)号: US06900498B2公开(公告)日: 2005-05-31
- 发明人: Gregory T. Stauf , Bryan C. Hendrix , Jeffrey F. Roeder , Ing-Shin Chen
- 申请人: Gregory T. Stauf , Bryan C. Hendrix , Jeffrey F. Roeder , Ing-Shin Chen
- 申请人地址: US CT Danbury
- 专利权人: Advanced Technology Materials, Inc.
- 当前专利权人: Advanced Technology Materials, Inc.
- 当前专利权人地址: US CT Danbury
- 代理商 Margaret Chappuis; Steven Hultquist, Esq.
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/28 ; H01L27/108
摘要:
An integrated circuit barrier structure disposed between high dielectric constant metal oxide and Cu or Al electrodes, for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes. Such barrier structure also protects the Cu or Al electrodes against oxidization during deposition of the high dielectric constant metal oxide. The barrier structure can be formed as (1) a single layer of Pt, Ir, IrO2, Ir2O3, Ru, RuO2, CuO, Cu2O, Al2O3, or a binary or ternary metal nitride, e.g., TaN, NbN, HfN, ZrN, WN, W2N, TiN, TiSiN, TiAlN, TaSiN, or NbAlN, or (2) double or triple layers of such materials, e.g., Pt/TiAlN, Pt/IrO2, Pt/Ir, Ir/TiAlN, Ir/IrO2, IrO2/TiAlN, IrO2/Ir, or IrO2/Ir2O3/Ir. Such barrier structures enable Cu or Al electrodes to be used in combination with high dielectric constant metal oxides in microelectronic structures such as ferroelectric stack and trench capacitors, non-volatile ferroelectric memory cells, and dynamic random access memory (DRAM) cells.