发明授权
- 专利标题： Semiconductor laser device
- 专利标题（中）： 半导体激光器件
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申请号： US10452517申请日： 2003-06-03
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公开(公告)号： US06901093B2公开(公告)日： 2005-05-31
- 发明人: Yasunori Hosokawa , Kenji Ohgiyama , Makoto Kanda
- 申请人： Yasunori Hosokawa , Kenji Ohgiyama , Makoto Kanda
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2002-345572 20021128
- 主分类号： H01S3/04
- IPC分类号： H01S3/04 ; H01S5/022 ; H01S5/024 ; H01S5/10
摘要：
A semiconductor laser apparatus includes a base, a block, and a semiconductor laser element. The base has a recess on a main plane thereof. The block is perpendicularly elongating on the main plane. The block is neighboring the recess. The semiconductor laser element is mounted on a side of the block. A first end of the semiconductor element is located on outer side of the recess, and a second end of the semiconductor element is located on inner side of the recess.
公开/授权文献
- US20040105472A1 Semiconductor laser device 公开/授权日：2004-06-03
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