发明授权
US06903350B1 Ion beam scanning systems and methods for improved ion implantation uniformity
有权
离子束扫描系统和改善离子注入均匀性的方法
- 专利标题: Ion beam scanning systems and methods for improved ion implantation uniformity
- 专利标题(中): 离子束扫描系统和改善离子注入均匀性的方法
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申请号: US10865061申请日: 2004-06-10
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公开(公告)号: US06903350B1公开(公告)日: 2005-06-07
- 发明人: Bo H. Vanderberg , Andrew M. Ray , Kevin W. Wenzel
- 申请人: Bo H. Vanderberg , Andrew M. Ray , Kevin W. Wenzel
- 申请人地址: US MA Beverly
- 专利权人: Axcelis Technologies, Inc.
- 当前专利权人: Axcelis Technologies, Inc.
- 当前专利权人地址: US MA Beverly
- 代理机构: Eschweiler & Associates LLC
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01L21/324
摘要:
Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.
公开/授权文献
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