公开(公告)号：US20090294698A1

公开(公告)日：2009-12-03

申请号：US12474786

申请日：2009-05-29

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J2237/022

Abstract: A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system, wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.

Abstract translation: 用于在离子注入期间减少颗粒污染的方法包括提供用于通过离子束将离子注入工件的注入系统，其中一个或多个组分处于选择性真空下并且在其上设置有第一状态的一种或多种污染物。 气体被引入到植入系统中，其中气体通常与至少一部分一种或多种污染物反应，其中将一种或多种污染物的至少一部分转化为第二状态。至少一部分 处于第二状态的一个或多个污染物保持设置在一个或多个部件上，并且其中一个或多个污染物的第二状态的至少一部分通常不会在一个或多个工件上产生颗粒污染。

公开(公告)号：US5406088A

公开(公告)日：1995-04-11

申请号：US172441

申请日：1993-12-22

Applicant: Robert A. Brune ,  Andrew M. Ray

Inventor： Robert A. Brune ,  Andrew M. Ray

IPC: C23C14/48 ,  B25J9/04 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265 ,  H01L21/68

CPC classification number: H01J37/3171 ,  B25J9/042 ,  H01J2237/20228

Abstract: An improved scan and tilt apparatus for an ion implanter wherein a wafer-receiving platen assembly is received on the end member of a multiple axis arm system which is operable to effect scanning motion of the wafer along a straight line which intercepts the wafer tilt axis in any tilt position of the platen assembly. The arm system includes a rail and linear bearing system which interconnects an input member with the end member of the arm system to restrict the scanning motion to a straight line.

Abstract translation: 一种用于离子注入机的改进的扫描和倾斜装置，其中晶片接收压板组件被容纳在多轴臂系统的端部构件上，该多轴臂系统的端部构件可操作以实现晶片沿着截取晶片倾斜轴线的直线的扫描运动 压板组件的任何倾斜位置。 臂系统包括轨道和直线轴承系统，其将输入构件与臂系统的端部构件相互连接，以将扫描运动限制为直线。

公开(公告)号：US5160846A

公开(公告)日：1992-11-03

申请号：US804484

申请日：1991-12-09

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/1477

Abstract: An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel that are biased by a control circuit. Once deflected, the ion beam enters an electrostatic lens that redeflects the once deflected ion beam. When the beam exits the lens it moves along a trajectory that impacts a workpiece. By controlled deflection of the beam multiple parallel beam paths result, all of which input the workpiece at a uniform impact angle.

Abstract translation: 离子束注入系统。 当离子束通过由控制电路偏置的间隔开的并联时，离子束可以从初始轨迹可控地偏转。 一旦偏转，离子束就进入静电透镜，该透镜重新反射一次偏转的离子束。 当光束离开透镜时，它沿着撞击工件的轨迹移动。 通过光束的受控偏转，产生多个平行光束路径，所有这些均匀的冲击角度输入工件。

公开(公告)号：US06940079B2

公开(公告)日：2005-09-06

申请号：US11006840

申请日：2004-12-08

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: H01J37/147 ,  H01J37/317 ,  H01L21/265 ,  B32B3/02

CPC classification number: H01L21/26513 ,  B32B3/02 ,  H01J37/3171 ,  H01J2237/1501 ,  H01J2237/31701 ,  H01L21/26586 ,  Y10S414/135 ,  Y10T428/21

Abstract: The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

Abstract translation: 本发明旨在说明离子注入系统中的晶体切割误差数据，从而促进更精确的离子注入。 本发明的一个或多个方面还考虑可能由在被掺杂的晶片的表面上形成的特征产生的阴影效应。 根据本发明的一个或多个方面，晶体切割误差数据和任选的特征数据也在一个或多个离子注入阶段或系统中周期性地向前馈送，以确定如何相对于工件重新定向离子束以实现期望的 植入结果。

公开(公告)号：US06903350B1

公开(公告)日：2005-06-07

申请号：US10865061

申请日：2004-06-10

Applicant: Bo H. Vanderberg ,  Andrew M. Ray ,  Kevin W. Wenzel

Inventor： Bo H. Vanderberg ,  Andrew M. Ray ,  Kevin W. Wenzel

IPC: H01J37/317 ,  H01L21/324

CPC classification number: H01J37/3171 ,  H01J2237/21

Abstract: Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.

Abstract translation: 提供了离子注入系统及其扫描系统，其中提供了焦点调节装置以动态地调整离子束的聚焦特性以补偿扫描仪的至少一个时变焦点特性。 提供了用于向工件提供扫描离子束的方法，包括动态地调整离子束的聚焦特性，扫描离子束以产生扫描离子束，以及将扫描的离子束引向工件。

公开(公告)号：US5229615A

公开(公告)日：1993-07-20

申请号：US847766

申请日：1992-03-05

Applicant: Robert A. Brune ,  Dorsey T. Smith ,  Andrew M. Ray

Inventor： Robert A. Brune ,  Dorsey T. Smith ,  Andrew M. Ray

IPC: C23C14/48 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J2237/184 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/31703

Abstract: An end station for an ion implanter includes a loading station, a loadlock station, a vacuum chamber and a wafer handler within the vacuum chamber. The wafer handler includes a wafer-receiving platen assembly on the end of a multiple axis arm system wherein the arm system is capable of positioning the wafer for low and high angle of incidence implantation, rotating the wafer about an axis perpendicular to the wafer surface, and effecting scanning motion of the wafer along a straight line which intercepts the wafer tilt axis in any tilt position of the platen assembly. The invention further includes a loadlock including an upper element receiving wafers from the loading station and a lower element operable to position wafers for engagement by a transfer arm which transfers wafers from the loadlock to the wafer handler.

公开(公告)号：US4943728A

公开(公告)日：1990-07-24

申请号：US317225

申请日：1989-02-28

Applicant: Jerald P. Dykstra ,  Andrew M. Ray

Inventor： Jerald P. Dykstra ,  Andrew M. Ray

IPC: H01J37/09 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/09

Abstract: A defining aperture for an ion implanter in which wafers are implanted at high tilt angles, which aperture is configured to project a substantially circular beam pattern on the surface of the tilted wafer. One embodiment includes one or more movable aperture plates having elliptical apertures formed therein operating in conjunction with a fixed aperture plate having a circular aperture. Other embodiments include movable elliptical apertures, and a circular aperture rotatable about an axis perpendicular to the tilt axis of the wafer. Where an electron flood ring is used, one or more movable rings having elliptical apertures opening can be used.

公开(公告)号：US07417242B2

公开(公告)日：2008-08-26

申请号：US11390039

申请日：2006-03-27

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: G21F5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30405 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract translation: 提供了一种用于确定离子束到工件表面的位置和两个入射角的系统，装置和方法。 具有细长的第一和第二传感器的测量装置耦合到平移机构，其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器以与第一传感器成倾斜的角度延伸。 当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器可操作以确定位置和第一和第二角度 至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性。

公开(公告)号：US06989545B1

公开(公告)日：2006-01-24

申请号：US10886308

申请日：2004-07-07

Applicant: Robert D. Rathmell ,  Douglas A. Brown ,  Andrew M. Ray

Inventor： Robert D. Rathmell ,  Douglas A. Brown ,  Andrew M. Ray

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31703

Abstract: The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.

Abstract translation: 本发明通过获得垂直于扫描光束的平面的离子束的入射角和发散角来促进半导体器件的制造。 使用包括掩模和轮廓仪/传感器的发散检测器从入射离子束获得子束，然后在多个垂直位置测量束电流。 然后使用这些射束电流测量来提供垂直入射角，其提供用于表征离子束的垂直发散分布。 这些值可以由离子束产生机构使用，以对所产生的离子束或工件的位置执行调整，如果值表示偏离期望值。

公开(公告)号：US06953942B1

公开(公告)日：2005-10-11

申请号：US10944989

申请日：2004-09-20

Applicant: Michael A. Graf ,  Andrew M. Ray

Inventor： Michael A. Graf ,  Andrew M. Ray

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

Abstract translation: 本发明涉及以串联注入工艺将离子注入到工件中，以产生类似于工件的尺寸，形状和/或其它尺寸方面的扫描图案。 这提高了工件振荡通过的离子束的效率和产量，并不会显着“过冲”工件。 然而，扫描图案可能稍微大于工件，使得随着工件反向前后摆动的方向，工件的方向，速度和/或加速度的变化所引起的惯性效应在少量的“ 超调“。 这有助于以相对恒定的速度移动工件穿过离子束，这又促进了基本上更均匀的离子注入。