发明授权
- 专利标题： Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus
- 专利标题（中）： 带电粒子束曝光装置，装置制造方法和带电粒子束施加装置
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申请号： US10125439申请日： 2002-04-19
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公开(公告)号： US06903353B2公开(公告)日： 2005-06-07
- 发明人: Masato Muraki , Yasunari Sohda , Shinichi Hashimoto
- 申请人： Masato Muraki , Yasunari Sohda , Shinichi Hashimoto
- 申请人地址： JP Tokyo JP Tokyo JP Tokyo
- 专利权人： Canon Kabushiki Kaisha,Hitachi, Ltd.,Advantest Corporation
- 当前专利权人： Canon Kabushiki Kaisha,Hitachi, Ltd.,Advantest Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2001-124758 20010423
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01J37/04 ; H01J37/09 ; H01J37/305 ; H01J37/317 ; H01L21/027 ; H01J37/153
摘要：
A high-precision multi-charged-particle-beam exposure apparatus has a charged particle source (ES) that emits a charged particle beam. An aperture array (AA) having plural apertures divides the charged particle beam from the charged particle source (ES) into plural charged particle beams and a lens array (LA) having plural electron lens forms plural intermediate images of the charged particle source (ES) on substantially one plane with the plural charged particle beams from the aperture array (AA). A blanker array (BA) located on the plane where the plurality of intermediate images are to be formed has plural blankers, and a reduction electron optical system that reduces and projects the images of the charged particle source (ES) onto a substrate.
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