发明授权
- 专利标题： Thin-film semiconductor epitaxial substrate having boron containing interface layer between a collector layer and a sub-collector layer
- 专利标题（中）： 在集电极层和副集电极层之间具有含硼界面层的薄膜半导体外延基板
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申请号： US10394068申请日： 2003-03-24
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公开(公告)号： US06914274B2公开(公告)日： 2005-07-05
- 发明人: Yuichi Hiroyama , Tomoyuki Takada , Osamu Ichikawa
- 申请人： Yuichi Hiroyama , Tomoyuki Takada , Osamu Ichikawa
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人地址： JP Osaka
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2002-118444 20020419
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/08 ; H01L29/737
摘要：
A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.
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