发明授权
- 专利标题： Magnetoresistive sensor with magnetic flux paths surrounding non-magnetic regions of ferromagnetic material layer
- 专利标题（中）： 磁阻传感器，其磁路围绕铁磁材料层的非磁性区域
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申请号： US10827080申请日： 2004-04-19
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公开(公告)号： US06914761B2公开(公告)日： 2005-07-05
- 发明人: Richard Joseph Gambino , Thomas Penney, III , John Casimir Slonczewski
- 申请人： Richard Joseph Gambino , Thomas Penney, III , John Casimir Slonczewski
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Robert M. Trepp; Alek P. Szecsy
- 主分类号： G01C17/32
- IPC分类号： G01C17/32 ; G01R33/09 ; G11B5/39
摘要：
A magnetoresistive sensor includes a substrate and a layer of ferromagnetic material formed over the substrate. A plurality of nonmagnetic regions is formed within the layer of ferromagnetic material. Magnetic flux paths form around each one of the plurality of nonmagnetic regions when the layers of ferromagnetic material is not in a magnetic field. The flux paths are contained completely with the layer of ferromagnetic material and do not penetrate into the plurality of nonmagnetic regions. The sensor also provides for detecting a change in resistance through the layer of ferromagnetic material as a function of a magnetic field applied to the layer of ferromagnetic material.
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