Invention Grant
- Patent Title: Method for fabricating image sensor
- Patent Title (中): 图像传感器的制造方法
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Application No.: US10720479Application Date: 2003-11-25
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Publication No.: US06916680B2Publication Date: 2005-07-12
- Inventor: Jae Suk Lee , Dae Heok Kwon
- Applicant: Jae Suk Lee , Dae Heok Kwon
- Applicant Address: KR Seoul
- Assignee: DongbuAnam Semiconductor Inc.
- Current Assignee: DongbuAnam Semiconductor Inc.
- Current Assignee Address: KR Seoul
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: KR10-2002-0086879 20021230
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L21/00 ; H01L27/146 ; H01L31/0232 ; H04N5/335 ; H04N5/369

Abstract:
A method for fabricating an image sensor comprises forming an over coat layer on an upper face of a semiconductor substrate on which a color filter layer is formed, forming a microlens on the over coat layer; covering the microlens with a protection layer, back grinding a lower face of the semiconductor substrate, and removing the protection layer of the microlens. In this method, the protection layer is formed on the microlens of an image sensor and is subsequently removed after back grinding.
Public/Granted literature
- US20040171181A1 Method for fabricating image sensor Public/Granted day:2004-09-02
Information query
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