发明授权
- 专利标题: Magneto-resistive devices
- 专利标题(中): 磁阻器件
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申请号: US10331664申请日: 2002-12-31
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公开(公告)号: US06917088B2公开(公告)日: 2005-07-12
- 发明人: Hiromasa Takahashi , Jun Hayakawa , Susumu Soeya , Kenchi Ito
- 申请人: Hiromasa Takahashi , Jun Hayakawa , Susumu Soeya , Kenchi Ito
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP
- 优先权: JP2002-196662 20020705
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G11B5/39 ; G11C11/15 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L27/14 ; H01L29/82 ; H01L29/84 ; H01L43/08 ; H01L43/10
摘要:
A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.
公开/授权文献
- US20040004261A1 Magneto-resistive devices 公开/授权日:2004-01-08
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