发明授权
US06919168B2 Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
失效
用于高密度RAM电容器的图形化电极的掩模方法和蚀刻顺序
- 专利标题： Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
- 专利标题（中）： 用于高密度RAM电容器的图形化电极的掩模方法和蚀刻顺序
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申请号： US10057674申请日： 2002-01-24
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公开(公告)号： US06919168B2公开(公告)日： 2005-07-19
- 发明人: Jeng H. Hwang , Steve S. Y. Mak , True-Lon Lin , Chentsau Ying , John W. Schaller
- 申请人： Jeng H. Hwang , Steve S. Y. Mak , True-Lon Lin , Chentsau Ying , John W. Schaller
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Shirley L. Church; Kathi Bean; Joseph Bach
- 主分类号： C23F4/00
- IPC分类号： C23F4/00 ; H01L21/02 ; H01L21/3213 ; G03F7/00 ; G03F7/36
摘要：
A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.
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