发明授权
- 专利标题： Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members
- 专利标题（中）： 氮化铝陶瓷，用于半导体制造系统的部件和耐腐蚀部件
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申请号： US10308221申请日： 2002-11-26
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公开(公告)号： US06919286B2公开(公告)日： 2005-07-19
- 发明人: Jun Yoshikawa , Yuji Katsuda
- 申请人： Jun Yoshikawa , Yuji Katsuda
- 申请人地址： JP Nagoya
- 专利权人： NGK Insulators, Inc.
- 当前专利权人： NGK Insulators, Inc.
- 当前专利权人地址： JP Nagoya
- 代理机构： Burr & Brown
- 优先权： JPP2001-358971 20011126; JPP2002-290683 20021003
- 主分类号： C04B35/581
- IPC分类号： C04B35/581 ; C04B35/00 ; C04B35/58 ; C04B35/582 ; C04B35/5835 ; C04B35/645 ; H01L21/00 ; H01L21/02 ; H01L21/68 ; H01L21/683
摘要：
An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not lower than 1×1014Ω·cm, and a volume resistivity at 500° C. of not lower than 1×108Ω·cm. An a-axis lattice constant of the aluminum nitride in the ceramic is not shorter than 3.112 angstrom and a c-axis lattice constant of the aluminum nitride is not shorter than 4.980 angstrom.
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