Aluminum nitride materials and members used for the production of semiconductors
    2.
    发明授权
    Aluminum nitride materials and members used for the production of semiconductors 有权
    氮化铝材料和用于半导体生产的部件

    公开(公告)号:US06919287B2

    公开(公告)日:2005-07-19

    申请号:US10417962

    申请日:2003-04-17

    CPC分类号: C04B35/581

    摘要: An aluminum nitride material having a high thermal conductivity and reduced room temperature volume resistivity is provided. The aluminum nitride material has an interconnected intergranular phase that functions as an electrically conductive phase. The content of the conductive phase is not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile: Content of the conductive phase (%)=(Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase)×100. The aluminum nitride material has an electric current response index in a range of 0.9 to 1.1, defined according to the following formula: Electric current response index=(Electric current Aat 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).

    摘要翻译: 提供具有高导热性和降低室温体积电阻率的氮化铝材料。 氮化铝材料具有互相作用的导电相的晶间相。 导电相的含量不高于20%,基于X射线衍射曲线,根据下式计算:导电相的含量(%)=(导电相/集成电路的最强峰的集成强度 强度最强的氮化铝相峰)×100。 氮化铝材料的电流响应指数在0.9至1.1的范围内,根据下式定义:电流响应指数=(施加电压5秒后的电流/电压后60秒的电流 被申请;被应用)。

    Apparatus for plasma treatment and method for plasma treatment
    5.
    发明授权
    Apparatus for plasma treatment and method for plasma treatment 有权
    等离子体处理装置及等离子体处理方法

    公开(公告)号:US09277637B2

    公开(公告)日:2016-03-01

    申请号:US13885708

    申请日:2011-11-16

    IPC分类号: H01L21/306 H05H1/46 H01J37/32

    摘要: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

    摘要翻译: 一种用于等离子体处理的装置,包括设置有用于安装基板的安装台的处理容器,构造成将第一气体供应到处理容器中的第一气体供给单元,第一等离子体产生单元,其被配置为将第一 第二气体供给单元,被配置为将第二气体供应到处理容器中;第二等离子体产生单元,被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

    Graphite nano-carbon fiber and method of producing the same
    8.
    发明授权
    Graphite nano-carbon fiber and method of producing the same 有权
    石墨纳米碳纤维及其制造方法

    公开(公告)号:US08444948B2

    公开(公告)日:2013-05-21

    申请号:US13204538

    申请日:2011-08-05

    IPC分类号: D01C5/00

    摘要: According to one embodiment, there is provided a graphite nano-carbon fiber provided by using an apparatus having a reactor capable of keeping a reducing atmosphere inside thereof, a metal substrate arranged as a catalyst in the reactor, a heater heating the metal substrate, a pyrolysis gas source supplying pyrolysis gas obtained by thermally decomposing a wood material in a reducing atmosphere to the reactor, a scraper scraping carbon fibers produced on the metal substrate, a recovery container recovering the scraped carbon fibers, and an exhaust pump discharging exhaust gas from the reactor. The carbon fibers are linear carbon fibers with a diameter of 25 to 250 nm formed with layers of graphenes stacked in a longitudinal direction.

    摘要翻译: 根据一个实施方案,提供一种石墨纳米碳纤维,其通过使用具有能够保持其内部还原气氛的反应器的装置,在反应器中作为催化剂排列的金属基材,加热金属基材的加热器, 通过将还原性气氛中的木质材料热分解成反应器得到的裂解气体的热解气体源,在该金属基材上产生的刮刀刮除碳纤维,回收上述刮削碳纤维的回收容器以及从上述排出废气排出废气的排气泵 反应堆。 碳纤维是直径为25至250nm的线性碳纤维,其沿长度方向堆叠形成有层叠的石墨烯。

    Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device
    10.
    发明授权
    Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device 有权
    氮化铝系陶瓷烧结体及半导体制造装置用部件

    公开(公告)号:US07553787B2

    公开(公告)日:2009-06-30

    申请号:US11612016

    申请日:2006-12-18

    IPC分类号: C04B35/581

    摘要: An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.

    摘要翻译: 提供了一种氮化铝系陶瓷烧结体,其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量%以上至1.0重量%以下的量烧结而形成, 量不大于0.7重量%,其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内,晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 在500℃下的氮化铝系陶瓷烧结体的体积电阻率为109Ω·cm以上。