发明授权
- 专利标题： High-voltage silicon controlled rectifier structure with improved punch through resistance
- 专利标题（中）： 高压可控硅整流器结构，具有改善的穿通电阻
-
申请号： US10650000申请日： 2003-08-27
-
公开(公告)号： US06919588B1公开(公告)日： 2005-07-19
- 发明人: Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
- 申请人： Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Mark C. Pickering
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L29/74
摘要：
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.
信息查询
IPC分类:
