发明授权
US06921622B2 Photoresist monomers, polymers thereof and photoresist compositions containing the same
失效
光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
- 专利标题： Photoresist monomers, polymers thereof and photoresist compositions containing the same
- 专利标题（中）： 光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
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申请号： US10054532申请日： 2002-01-22
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公开(公告)号： US06921622B2公开(公告)日： 2005-07-26
- 发明人: Geun Su Lee , Jae Chang Jung , Ki Soo Shin
- 申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
- 申请人地址： KR Kyoungki-Do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-Do
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： KR2001-38118 20010629
- 主分类号： C08F234/04
- IPC分类号： C08F234/04 ; G03F7/004 ; G03F7/039 ; G03F7/20
摘要：
Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device
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