Invention Grant
US06921622B2 Photoresist monomers, polymers thereof and photoresist compositions containing the same
失效
光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
- Patent Title: Photoresist monomers, polymers thereof and photoresist compositions containing the same
- Patent Title (中): 光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
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Application No.: US10054532Application Date: 2002-01-22
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Publication No.: US06921622B2Publication Date: 2005-07-26
- Inventor: Geun Su Lee , Jae Chang Jung , Ki Soo Shin
- Applicant: Geun Su Lee , Jae Chang Jung , Ki Soo Shin
- Applicant Address: KR Kyoungki-Do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-Do
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR2001-38118 20010629
- Main IPC: C08F234/04
- IPC: C08F234/04 ; G03F7/004 ; G03F7/039 ; G03F7/20
Abstract:
Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device
Public/Granted literature
- US20030022100A1 Photoresist monomers, polymers thereof and photoresist compositions containing the same Public/Granted day:2003-01-30
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