发明授权
US06921741B2 Substrate structure for growth of highly oriented and/or epitaxial layers thereon
有权
用于在其上生长高定向和/或外延层的衬底结构
- 专利标题: Substrate structure for growth of highly oriented and/or epitaxial layers thereon
- 专利标题(中): 用于在其上生长高定向和/或外延层的衬底结构
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申请号: US10359808申请日: 2003-02-07
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公开(公告)号: US06921741B2公开(公告)日: 2005-07-26
- 发明人: Paul N. Arendt , Stephen R. Foltyn , James R. Groves , Quanxi Jia
- 申请人: Paul N. Arendt , Stephen R. Foltyn , James R. Groves , Quanxi Jia
- 申请人地址: US NM Los Alamos
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US NM Los Alamos
- 代理商 Bruce H. Cottrell
- 主分类号: C23C14/08
- IPC分类号: C23C14/08 ; C30B23/02 ; H01L39/24 ; B32B19/00 ; B32B9/00 ; H01L39/00
摘要:
A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer.Jc′s of 2.3×106 A/cm2 have been demonstrated with projected Ic′s of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.
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