Invention Grant
- Patent Title: Narrow fin FinFET
- Patent Title (中): 窄鳍FinFET
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Application No.: US10830006Application Date: 2004-04-23
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Publication No.: US06921963B2Publication Date: 2005-07-26
- Inventor: Zoran Krivokapic , Judy Xilin An , Srikanteswara Dakshina-Murthy , Haihong Wang , Bin Yu
- Applicant: Zoran Krivokapic , Judy Xilin An , Srikanteswara Dakshina-Murthy , Haihong Wang , Bin Yu
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc
- Current Assignee: Advanced Micro Devices, Inc
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Snyder LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/423 ; H01L29/786 ; H01L29/06
Abstract:
A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.
Public/Granted literature
- US20040197975A1 Narrow fin finfet Public/Granted day:2004-10-07
Information query
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