发明授权
- 专利标题: Protective side wall passivation for VCSEL chips
- 专利标题(中): VCSEL芯片的保护侧壁钝化
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申请号: US10427237申请日: 2003-05-01
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公开(公告)号: US06924161B2公开(公告)日: 2005-08-02
- 发明人: James C. Nohava , Robert A. Morgan , Eva M. B. Strzelecka , Yue Liu
- 申请人: James C. Nohava , Robert A. Morgan , Eva M. B. Strzelecka , Yue Liu
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Workman Nydegger
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01S5/183 ; H01L21/00
摘要:
Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
公开/授权文献
- US20030211642A1 Protective side wall passivation for VCSEL chips 公开/授权日:2003-11-13
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