发明授权
US06924223B2 Method of forming a metal layer using an intermittent precursor gas flow process
有权
使用间歇性前体气体流动方法形成金属层的方法
- 专利标题： Method of forming a metal layer using an intermittent precursor gas flow process
- 专利标题（中）： 使用间歇性前体气体流动方法形成金属层的方法
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申请号： US10673646申请日： 2003-09-30
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公开(公告)号： US06924223B2公开(公告)日： 2005-08-02
- 发明人: Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
- 申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
- 申请人地址： JP Tokyo US NY Armonk
- 专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人地址： JP Tokyo US NY Armonk
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C23C16/16 ; C23C16/44 ; C23C16/455 ; H01L21/285 ; H01L21/768 ; H01L21/44
摘要：
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
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