发明授权
US06925015B2 Stacked memory device having shared bitlines and method of making the same
有权
具有共享位线的堆叠存储器件及其制造方法
- 专利标题： Stacked memory device having shared bitlines and method of making the same
- 专利标题（中）： 具有共享位线的堆叠存储器件及其制造方法
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申请号： US10305588申请日： 2002-11-26
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公开(公告)号： US06925015B2公开(公告)日： 2005-08-02
- 发明人: John I. Garney , David G. Chow , Rick Coulson
- 申请人： John I. Garney , David G. Chow , Rick Coulson
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Lanny L. Parker
- 主分类号： G11C7/18
- IPC分类号： G11C7/18 ; H01L27/115 ; G11C11/34
摘要：
Briefly, in accordance with one embodiment of the invention, a system includes a memory array. The memory array comprises a first layer of memory cells overlying a second layer of memory cells and bit lined coupled to at least one memory cell in the first layer of memory cells and to at least one memory cell in the second layer of memory cell.
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