发明授权
- 专利标题： Etching apparatus using neutral beam
- 专利标题（中）： 使用中性梁的蚀刻装置
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申请号： US10086496申请日： 2002-02-28
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公开(公告)号： US06926799B2公开(公告)日： 2005-08-09
- 发明人: Geun-young Yeom , Do-haing Lee , Min-jae Chung
- 申请人： Geun-young Yeom , Do-haing Lee , Min-jae Chung
- 申请人地址： KR Seoul
- 专利权人： Sungkyunkwan University
- 当前专利权人： Sungkyunkwan University
- 当前专利权人地址： KR Seoul
- 代理机构： Foley & Lardner LLP
- 优先权： KR2001-73880 20011126
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; C23F4/00 ; H01J37/08 ; H01L21/00
摘要：
A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.
公开/授权文献
- US20030098126A1 Etching apparatus using neutral beam 公开/授权日：2003-05-29
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