发明授权
- 专利标题： Method for fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10738394申请日： 2003-12-17
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公开(公告)号： US06927152B2公开(公告)日： 2005-08-09
- 发明人: Seung Woo Jin , Tae Hyeok Lee , Bong Soo Kim
- 申请人： Seung Woo Jin , Tae Hyeok Lee , Bong Soo Kim
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2003-0013716 20030305
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/425 ; H01L21/44 ; H01L21/8238 ; H01L21/8239 ; H01L21/8242
摘要：
The present invention relates to a method for fabricating a semiconductor device. The method comprises the steps of: 1. A method for fabricating a semiconductor device, which comprises the steps of: forming a gate line on a semiconductor substrate; forming junction regions in the semiconductor substrate at both sides of the gate line; forming and selectively removing an interlayer insulating film on the substrate to form contact holes exposing the junction regions; forming plugs in the contact holes; and implanting impurity ions into the plugs; and annealing the junction regions.
公开/授权文献
- US20040175894A1 Method for fabricating semiconductor device 公开/授权日：2004-09-09
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