NAND type dual bit nitride read only memory

Invention Grant

US06927448B2 NAND type dual bit nitride read only memory 有权

Title translation: NAND型双位氮化物只读存储器

Please log in to see more content

Patent Title: NAND type dual bit nitride read only memory
Patent Title (中): NAND型双位氮化物只读存储器
Application No.: US10682861

Application Date: 2003-10-14
Publication No.: US06927448B2

Publication Date: 2005-08-09
Inventor: Chien-Hung Liu
Applicant: Chien-Hung Liu
Applicant Address: TW Hsinchu
Assignee: Macronix International Co. Ltd.
Current Assignee: Macronix International Co. Ltd.
Current Assignee Address: TW Hsinchu
Agency: Rabin & Berdo, P.C.
Priority: TW92119086A 20030711
Main IPC: H01L21/8246
IPC: H01L21/8246 ; H01L27/115 ; H01L29/792 ; H01L29/788

Abstract:

A NAND type dual bit nitride read only memory and a method for fabricating thereof are provided. Firstly, a plurality of isolation layers, which are spaced and parallel to each other are formed in the substrate. Next, a plurality of word lines and a plurality of oxide-nitride-oxide (ONO) stack structures are formed on the substrate. The word lines are spaced and parallel to each other, and also the word lines are perpendicular to the isolation layers. Each of the ONO stack structure is located between the corresponding word line and the substrate. And then a plurality of discontinuous bit lines, which are located between the word lines and between the isolation layers are formed on the substrate. The structure of the present invention of the NAND type dual bit nitride read only memory is similar to that of a complementary metal-oxide semiconductor (CMOS), and their fabrication processes are fully compatible.

Abstract(Chinese):

提供NAND型双位氮化物只读存储器及其制造方法。首先，在衬底中形成彼此间隔开并平行的多个隔离层。接下来，在基板上形成多个字线和多个氧化物 - 氮化物 - 氧化物（ONO）堆叠结构。字线彼此间隔开并平行，字线也垂直于隔离层。每个ONO堆叠结构位于相应的字线和基板之间。然后，在基板上形成位于字线之间和隔离层之间的多个不连续位线。本发明的NAND型双位氮化物只读存储器的结构类似于互补金属氧化物半导体（CMOS）的结构，并且它们的制造工艺是完全兼容的。

Public/Granted literature

US20050006694A1 NAND type dual bit nitride read only memory and method for fabricating the same Public/Granted day:2005-01-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8246	.........只读存储器结构（ROM）