发明授权
- 专利标题： Method of forming a superconductor film
- 专利标题（中）： 形成超导膜的方法
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申请号： US10237125申请日： 2002-09-09
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公开(公告)号： US06929820B2公开(公告)日： 2005-08-16
- 发明人: Hisashi Shimakage , Atsushi Saito , Akira Kawakami , Zhen Wang
- 申请人： Hisashi Shimakage , Atsushi Saito , Akira Kawakami , Zhen Wang
- 申请人地址： JP Tokyo
- 专利权人： National Institute of Information and Communications Technology
- 当前专利权人： National Institute of Information and Communications Technology
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-356803 20011122
- 主分类号： C01G1/00
- IPC分类号： C01G1/00 ; C01B35/04 ; C23C14/06 ; C23C14/24 ; H01L39/12 ; H01L39/24 ; B05D5/12 ; C23C14/32
摘要：
A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.
公开/授权文献
- US20030130130A1 Method of forming a superconductor film 公开/授权日：2003-07-10
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