发明授权
- 专利标题： Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence
- 专利标题（中）： 使用桥接金属化制造顺序的鲁棒超低k互连结构
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申请号： US10331038申请日： 2002-12-27
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公开(公告)号： US06930034B2公开(公告)日： 2005-08-16
- 发明人: Matthew E. Colburn , Elbert E. Huang , Satyanarayana V. Nitta , Sampath Purushothaman , Katherine L. Saenger
- 申请人： Matthew E. Colburn , Elbert E. Huang , Satyanarayana V. Nitta , Sampath Purushothaman , Katherine L. Saenger
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Harrington & Smith, LLP
- 代理商 Daniel P. Morris, Esq
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/4763
摘要：
A method for fabricating low k and ultra-low k multilayer interconnect structures on a substrate includes: a set of interconnects separated laterally by air gaps; forming a support layer in the via level of a dual damascene structure that is only under the metal line; removing a sacrificial dielectric through a perforated bridge layer that connects the top surfaces of the interconnects laterally; performing multilevel extraction of a sacrificial layer; sealing the bridge in a controlled manner; and decreasing the effective dielectric constant of a membrane by perforating it using sub-optical lithography patterning techniques.
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