发明授权
US06933545B2 Hetero-bipolar transistor having the base interconnection provided on the normal mesa surface of the collector mesa
失效
具有设置在集电极台面的正常台面表面上的基极互连的异质双极晶体管
- 专利标题： Hetero-bipolar transistor having the base interconnection provided on the normal mesa surface of the collector mesa
- 专利标题（中）： 具有设置在集电极台面的正常台面表面上的基极互连的异质双极晶体管
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申请号： US10859615申请日： 2004-06-03
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公开(公告)号： US06933545B2公开(公告)日： 2005-08-23
- 发明人: Takeshi Kawasaki , Hiroshi Yano
- 申请人： Takeshi Kawasaki , Hiroshi Yano
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2003-159910 20030604
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L23/482 ; H01L29/04 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/737 ; H01L31/0328
摘要：
The present invention provides a hetero-bipolar transistor having a new configuration of the interconnection. The bipolar transistor of the present invention includes the collector mesa, having the base and collector layers therein, includes a first side having a normal mesa surface and extending along the [01-1] orientation, and a second side having a reverse mesa surface and extending along the [011] orientation. The present HBT has a base interconnection, a portion of which diagonally intersects the first side of the collector mesa, accordingly, the breaking of the interconnection may not occur and the high frequency performance of the HBT may be enhanced because the width of the collector mesa is not necessary to widen to disposed the base interconnection on the first side.
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