- 专利标题： Semiconductor device whose semiconductor chip has chamfered backside surface edges and method of manufacturing the same
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申请号： US10685412申请日： 2003-10-16
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公开(公告)号： US06933606B2公开(公告)日： 2005-08-23
- 发明人: Tetsuya Kurosawa
- 申请人： Tetsuya Kurosawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-303377 20021017
- 主分类号： B24B19/02
- IPC分类号： B24B19/02 ; H01L21/02 ; H01L21/301 ; H01L21/304 ; H01L21/44 ; H01L21/68 ; H01L21/78 ; H01L23/00 ; H01L23/04 ; H01L29/04 ; H01L29/06
摘要：
A semiconductor element is formed in the major surface of a semiconductor chip. Curved surfaces having a radius of curvature of 0.5 to 50 μm are formed at at least some of edges where the side surfaces and backside surface of the semiconductor chip cross.
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