发明授权
- 专利标题： Thermal processing method and thermal processing apparatus for substrate employing photoirradiation
- 专利标题（中）： 热处理方法和使用光照射的基板的热处理装置
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申请号： US10460292申请日： 2003-06-11
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公开(公告)号： US06936797B2公开(公告)日： 2005-08-30
- 发明人: Akihiro Hosokawa
- 申请人： Akihiro Hosokawa
- 申请人地址： JP
- 专利权人： Dainippon Screen Mfg. Co., Ltd.
- 当前专利权人： Dainippon Screen Mfg. Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Ostrolenk, Faber, Gerb & Soffen, LLP
- 优先权： JPP2002-184449 20020625; JPP2003-003225 20030109
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; G21K5/04 ; H01L21/00 ; H01L21/268 ; F27B5/14
摘要：
Each of a plurality of flash lamps forming a light source is a bar lamp having an elongated cylindrical shape. The ratio of the distance between the flash lamps and a semiconductor wafer to the distance between the flash lamps and a reflector is set to not more than 1.8 or at least 2.2. Consequently, illuminance is weakened on portions of the main surface of the semiconductor wafer located immediately under the flash lamps along the vertical direction and strengthened in portions located immediately under the clearances between adjacent ones of the flash lamps along the vertical direction, thereby reducing illuminance irregularity on the overall main surface of the semiconductor wafer and improving in-plane uniformity of temperature distribution on the semiconductor wafer. Thus, a thermal processing apparatus capable of improving in-plane uniformity of temperature distribution on a substrate is provided.
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