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98 条记录 (耗时 0.048 秒)

    Dual substrate loadlock process equipment
    2.
    发明授权
    Dual substrate loadlock process equipment 有权
    双基板负载锁定工艺设备

    公开(公告)号：US07641434B2

    公开(公告)日：2010-01-05

    申请号：US10842079

    申请日：2004-05-10

    申请人： Shinichi Kurita ,  Wendell T. Blonigan ,  Akihiro Hosokawa

    发明人： Shinichi Kurita ,  Wendell T. Blonigan ,  Akihiro Hosokawa

    IPC分类号： C23C16/00 ,  H01L21/00

    CPC分类号： H01L21/68742 ,  B65G49/068 ,  B65G2249/02 ,  B65G2249/04 ,  C23C14/566 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67745 ,  H01L21/67748

    摘要： One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

    摘要翻译： 一个实施例涉及一种其中具有第一支撑结构的负载锁，用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔，以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底，以及第二孔，以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

    Chamber for uniform heating of large area substrates
    4.
    发明授权
    Chamber for uniform heating of large area substrates 失效
    用于均匀加热大面积基材的室

    公开(公告)号：US07442900B2

    公开(公告)日：2008-10-28

    申请号：US11396477

    申请日：2006-04-03

    申请人： Makoto Inagawa ,  Akihiro Hosokawa

    发明人： Makoto Inagawa ,  Akihiro Hosokawa

    IPC分类号： F27B5/14 ,  C23C16/00 ,  C23C16/54 ,  H01L21/324

    CPC分类号： H01L21/67109 ,  C23C16/54 ,  F27B17/0025

    摘要： Embodiments of the present invention generally provide an apparatus for providing a uniform thermal profile to a plurality of large area substrates during thermal processing. In one embodiment, an apparatus for thermal processing large area substrates includes a chamber having a plurality of processing zones disposed therein that are coupled to a lift mechanism. The lift mechanism is adapted to vertically position the plurality of processing zones within the chamber. Each processing zone further includes an upper heated plate, a lower heated plate adapted to support a first substrate thereon and an unheated plate adapted to support a second substrate thereon, wherein the unheated plate is disposed between the upper and lower heated plates.

    摘要翻译： 本发明的实施例通常提供一种用于在热处理期间向多个大面积基板提供均匀热分布的装置。 在一个实施例中，用于热处理大面积基板的装置包括具有设置在其中的多个处理区域的室，其联接到升降机构。 提升机构适于将多个处理区域垂直地定位在室内。 每个处理区还包括上加热板，适于在其上支撑第一基板的下加热板和适于在其上支撑第二基板的未加热板，其中未加热板设置在上加热板和下加热板之间。

    COOLED PVD SHIELD
    5.
    发明申请
    COOLED PVD SHIELD 审中-公开
    冷却PVD膜

    公开(公告)号：US20080006523A1

    公开(公告)日：2008-01-10

    申请号：US11764217

    申请日：2007-06-17

    申请人： Akihiro Hosokawa ,  Bradley O. Stimson ,  Hienminh Huu Le ,  Makoto Inagawa

    发明人： Akihiro Hosokawa ,  Bradley O. Stimson ,  Hienminh Huu Le ,  Makoto Inagawa

    IPC分类号： C23C16/00 ,  C23C14/32

    CPC分类号： C23C14/042 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32715

    摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

    摘要翻译： 本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。 顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。 顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。

    REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES
    6.
    发明申请
    REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
    氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射

    公开(公告)号：US20070261951A1

    公开(公告)日：2007-11-15

    申请号：US11697476

    申请日：2007-04-06

    申请人： Yan Ye ,  Ankur Kadam ,  Yanping Li ,  Allen Lau ,  Makoto Inagawa ,  Bradley Stimson ,  Akihiro Hosokawa

    发明人： Yan Ye ,  Ankur Kadam ,  Yanping Li ,  Allen Lau ,  Makoto Inagawa ,  Bradley Stimson ,  Akihiro Hosokawa

    IPC分类号： C23C14/00

    CPC分类号： C23C14/564 ,  C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/34 ,  H01J37/3438

    摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

    摘要翻译： 本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。 气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。 气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。 在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

    Partially suspended rolling magnetron
    7.
    发明申请
    Partially suspended rolling magnetron 有权
    部分悬浮磁控管

    公开(公告)号：US20070193881A1

    公开(公告)日：2007-08-23

    申请号：US11347667

    申请日：2006-02-03

    申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  John White

    发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  John White

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  H01J37/3435 ,  H01J37/3455

    摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.

    摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在其上滑动或滚动的靶上的多个位置处从下方部分支撑。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 磁轭分开足够小的间隙，使得两个磁轭磁耦合。 每个轭具有其自己的一组弹簧支撑件，从上方起滚动/滑动支撑件，从而允许磁控管形状与靶材的形状一致。 或者，窄槽形成为单一轭。

    Controllable target cooling
    8.
    发明申请
    Controllable target cooling 有权
    可控制目标冷却

    公开(公告)号：US20070023275A1

    公开(公告)日：2007-02-01

    申请号：US11190389

    申请日：2005-07-27

    申请人： Yoshiaki Tanase ,  Makoto Inagawa ,  Akihiro Hosokawa

    发明人： Yoshiaki Tanase ,  Makoto Inagawa ,  Akihiro Hosokawa

    IPC分类号： C23C14/32 ,  C23C14/00

    CPC分类号： C23C14/3407 ,  H01J37/3408 ,  H01J37/3497 ,  Y10T29/49826

    摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.

    摘要翻译： 特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型面板等离子体溅射反应器的溅射靶组件。 目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。 孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。 四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。

    Electron beam welding of sputtering target tiles
    9.
    发明申请
    Electron beam welding of sputtering target tiles 失效
    溅射靶砖的电子束焊接

    公开(公告)号：US20060283705A1

    公开(公告)日：2006-12-21

    申请号：US11245590

    申请日：2005-10-07

    申请人： Yoshiaki Tanase ,  Akihiro Hosokawa

    发明人： Yoshiaki Tanase ,  Akihiro Hosokawa

    IPC分类号： B23K26/20 ,  B23K15/00

    CPC分类号： B23K26/24 ,  B23K15/0093 ,  B23K15/06 ,  B23K20/122 ,  B23K20/129 ,  C23C14/3414

    摘要： Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided. In one embodiment, a method for welding sputtering target tiles in an electron beam welding chamber comprises providing strips or powder of sputtering target material on a pre-determined at least one interfacial line between at least two sputtering target tiles, that are yet to be placed, on a surface of support, placing the at least two sputtering target tiles side by side with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line on top of the strips or powder of sputtering target material, pumping out the gas in the electron beam welding chamber, preheating the at least two sputtering target tiles and the strips or powder of sputtering target material to a pre-heat temperature less than the temperature at which the at least two target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition, and welding the at least two sputtering target tiles placed side by side into a large sputtering target.

    摘要翻译： 本发明的实施例提供了一种焊接溅射靶砖以形成大型溅射靶的方法。 还提供了具有焊接溅射靶瓦的溅射靶组件的实施例。 在一个实施例中，用于在电子束焊接室中焊接溅射靶瓦的方法包括在至少两个尚未被放置的溅射靶瓦之间的预定的至少一个界面线上提供溅射靶材料的条带或粉末 在支撑体的表面上，将至少两个溅射靶瓦并排放置在所述至少两个溅射靶瓷砖的边缘邻接并且在溅射靶材料的条或粉末的顶部上形成至少一个界面线，泵出 电子束焊接室中的气体，将至少两个溅射靶砖和溅射靶材料的条或粉末预热至小于至少两个靶砖开始熔化的温度的预热温度，经历 物理状态的变化或者经历显着的分解，并将至少两个并排放置的溅射靶砖焊接到大的溅射靶中。

    Elastomer bonding of large area sputtering target
    10.
    发明申请
    Elastomer bonding of large area sputtering target 有权

    公开(公告)号：US20060266643A1

    公开(公告)日：2006-11-30

    申请号：US11224221

    申请日：2005-09-12

    申请人： Hienminh Le ,  Akihiro Hosokawa

    发明人： Hienminh Le ,  Akihiro Hosokawa

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3407

    摘要： Embodiments of the present invention generally relate to sputtering targets used in semiconductor manufacturing. In particular, the invention relates to bonding the sputtering target to a backing plate that supports the sputtering target in a deposition chamber. In one embodiment, a method of bonding at least one sputtering target tile to a backing plate comprises providing an elastomeric adhesive layer between the at least one sputtering target tile and the backing plate, and providing at least one metal mesh within the elastomeric adhesive layer, wherein at least a portion of the at least one metal mesh contacts both the at least one sputtering target tile and the backing plate, and the at least a portion of the at least one metal mesh is made of metal wire with diameter greater than 0.5 mm.