发明授权
US06939767B2 Multi-bit non-volatile integrated circuit memory and method therefor
失效
多位非易失性集成电路存储器及其方法
- 专利标题： Multi-bit non-volatile integrated circuit memory and method therefor
- 专利标题（中）： 多位非易失性集成电路存储器及其方法
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申请号： US10716956申请日： 2003-11-19
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公开(公告)号： US06939767B2公开(公告)日： 2005-09-06
- 发明人: Alexander B. Hoefler , Ko-Min Chang
- 申请人： Alexander B. Hoefler , Ko-Min Chang
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Daniel D. Hill; Michael Balconi-Lamica
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788
摘要：
A non-volatile memory (10) includes at least two buried bit lines (45, 47) formed within a semiconductor substrate (12), a charge storage layer (18) overlying the semiconductor substrate (12); a control gate (26) overlying the charge storage layer (18); an insulating liner (30) overlying the control gate; and first and second conductive sidewall spacer control gates (32, 34). Multiple programmable charge storage regions (42) and (41, 44) are created within the charge storage layer (18) beneath respective ones of the control gate (26) and the first and second sidewall spacer control gates (32, 34). Also, the non-volatile memory (10) is a virtual ground NOR type multi-bit flash EEPROM (electrically erasable programmable read only memory). By using conductive sidewall spacers as the control gates, a very dense multi-bit non-volatile memory can be manufactured.
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