发明授权
- 专利标题: Vertical NROM and methods for making thereof
- 专利标题(中): 垂直NROM及其制造方法
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申请号: US10407627申请日: 2003-04-04
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公开(公告)号: US06940125B2公开(公告)日: 2005-09-06
- 发明人: Sohrab Kianian , Dana Lee
- 申请人: Sohrab Kianian , Dana Lee
- 申请人地址: US CA Sunnyvale
- 专利权人: Silicon Storage Technology, Inc.
- 当前专利权人: Silicon Storage Technology, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: DLA Piper Rudnick Gray Cary US LLP
- 主分类号: H01L21/8246
- IPC分类号: H01L21/8246 ; H01L27/115 ; H01L29/792 ; H01L29/76
摘要:
Vertical NROM devices are made in a substantially single crystalline silicon substrate having a planar surface. The vertical NROM cell and device has a first region and a second region spaced apart from one another by a channel. A dielectric is spaced apart from the channel to capture charges injected from the channel onto the dielectric. A gate is positioned over the dielectric and spaced apart therefrom and controls the flow of current through the channel. In the improvement of the present invention, a portion of the channel is substantially perpendicular to the top planar surface of the substrate. Methods for making the vertical NROM cell and array are also disclosed.
公开/授权文献
- US20040031984A1 Vertical NROM and methods for making thereof 公开/授权日:2004-02-19